(PR) Hynix Introduces High Performance DDR4 DRAM

Hynix Semiconductor Inc. ('Hynix') today announced that it has developed 2Gb(Gigabit) DDR4 DRAM and DDR4 DRAM based 2GB(Gigabyte) ECC-SODIMM(Error Check & Correction Small Outline Dual In-line Memory Module) applying its leading 30nm class process technology. The DDR4 DRAM product meets the JEDEC standard and the module product is designed for the micro server.

DDR4 DRAM is a next generation memory product which consumes less electronic power while it transfers data as twice as faster than the existing DDR3 DRAM. The device works at the industry's fastest speed of 2400Mbps(Megabits per second), which is also 80% faster than DDR3 1333Mbps product. The Module product operates at such a low voltage of 1.2V and processes up to 19.2 GB (Gigabytes) of data per second with a 64-bit I/O.

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